N-Channel MOSFET, 66 A, 850 V, 3-Pin TO-264 IXYS IXFK66N85X

RS Stock No.:: 146-4374
Mfr. Part No.:: IXFK66N85X
Brand:: IXYS

N-Channel MOSFET, 66 A, 850 V, 3-Pin TO-264 IXYS IXFK66N85X

Available to back order for despatch 13/05/2025

Added

Price Each

£21.85

(exc. VAT)

£26.22

(inc. VAT)

Units	Per unit
1 - 4	£21.85
5 - 9	£18.49
10 +	£17.72

RS Stock No.:: 146-4374
Mfr. Part No.:: IXFK66N85X
Brand:: IXYS

Technical Reference

Legislation and Compliance

Product Details

The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.

Ultra low on-resistance RDS(ON) and gate charge Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	66 A
Maximum Drain Source Voltage	850 V
Series	HiperFET
Package Type	TO-264
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5.5V
Minimum Gate Threshold Voltage	3.5V
Maximum Power Dissipation	1.25 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	±30 V
Number of Elements per Chip	1
Width	5.3mm
Typical Gate Charge @ Vgs	230 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	20.3mm
Forward Diode Voltage	1.4V
Minimum Operating Temperature	-55 °C
Height	26.3mm

RS Stock No.:: 146-4374
Mfr. Part No.:: IXFK66N85X
Brand:: IXYS