onsemi Dual N-Channel MOSFET, 3.5 A, 60 V, 8-Pin SOIC NDS9945
- RS Stock No.:
- 166-3245
- Mfr. Part No.:
- NDS9945
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 166-3245
- Mfr. Part No.:
- NDS9945
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 3.5 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 300 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 3.9mm | |
Length | 4.9mm | |
Typical Gate Charge @ Vgs | 12.9 nC @ 10 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 2 | |
Height | 1.57mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.5 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 300 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.9mm | ||
Length 4.9mm | ||
Typical Gate Charge @ Vgs 12.9 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Height 1.57mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi Dual N-Channel MOSFET 60 V, 8-Pin SOIC NDS9945
- onsemi PowerTrench Dual N-Channel MOSFET 60 V, 8-Pin SOIC FDS9945
- onsemi Dual N/P-Channel MOSFET 3.9 A 8-Pin SOIC SI4532DY
- onsemi Dual N-Channel MOSFET 30 V, 8-Pin SOIC NTMD4N03R2G
- onsemi Dual N-Channel MOSFET 40 V, 8-Pin SOIC FDS8949
- onsemi Dual N-Channel MOSFET 30 V, 8-Pin SOIC FDS8984
- ROHM SH8KC5 Dual Dual N-Channel MOSFET 60 V, 8-Pin SOP8 SH8KC5TB1
- onsemi PowerTrench Dual N-Channel MOSFET 100 V, 8-Pin SOIC FDS89141