onsemi Dual N/P-Channel MOSFET, 3.5 A, 3.9 A, 30 V, 8-Pin SOIC SI4532DY

Subtotal (1 reel of 2500 units)*

£820.00

(exc. VAT)

£985.00

(inc. VAT)

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Temporarily out of stock
  • 2,500 unit(s) shipping from 29 October 2025
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Units
Per unit
Per Reel*
2500 +£0.328£820.00

*price indicative

RS Stock No.:
166-1620
Mfr. Part No.:
SI4532DY
Brand:
onsemi
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Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

3.5 A, 3.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

95 mΩ, 190 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Number of Elements per Chip

2

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

Enhancement Mode Dual MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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