onsemi Dual N-Channel MOSFET, 3.5 A, 60 V, 8-Pin SOIC NDS9945
- RS Stock No.:
- 903-4374
- Mfr. Part No.:
- NDS9945
- Brand:
- onsemi
Subtotal (1 pack of 10 units)*
£4.77
(exc. VAT)
£5.72
(inc. VAT)
FREE delivery for orders over £50.00
- 2,290 left, ready to ship
- Final 200 unit(s) shipping from 09 October 2025
Units | Per unit | Per Pack* |
---|---|---|
10 + | £0.477 | £4.77 |
*price indicative
- RS Stock No.:
- 903-4374
- Mfr. Part No.:
- NDS9945
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 3.5 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 300 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Length | 4.9mm | |
Number of Elements per Chip | 2 | |
Width | 3.9mm | |
Typical Gate Charge @ Vgs | 12.9 nC @ 10 V | |
Height | 1.57mm | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.5 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 300 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 4.9mm | ||
Number of Elements per Chip 2 | ||
Width 3.9mm | ||
Typical Gate Charge @ Vgs 12.9 nC @ 10 V | ||
Height 1.57mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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