Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N, P
	Maximum Continuous Drain Current	5.5 A, 7 A
	Maximum Drain Source Voltage	30 V
	Package Type	ECH
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	24 mΩ, 39 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.6V
	Maximum Power Dissipation	1.3 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	2
	Width	2.3mm
	Length	2.9mm
	Typical Gate Charge @ Vgs	11.8 nC @ 10 V
	Transistor Material	Si
	Height	0.9mm

	Select all
	Brand onsemi
	Channel Type N, P
	Maximum Continuous Drain Current 5.5 A, 7 A
	Maximum Drain Source Voltage 30 V
	Package Type ECH
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 24 mΩ, 39 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.6V
	Maximum Power Dissipation 1.3 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 2
	Width 2.3mm
	Length 2.9mm
	Typical Gate Charge @ Vgs 11.8 nC @ 10 V
	Transistor Material Si
	Height 0.9mm

COO (Country of Origin):: CN

Dual N/P-Channel MOSFET, ON Semiconductor

The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

MOSFET Transistors, ON Semiconductor

onsemi Dual N/P-Channel MOSFET, 5.5 A, 7 A, 30 V, 8-Pin ECH ECH8661-TL-H

Dual N/P-Channel MOSFET, ON Semiconductor

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