onsemi Dual N/P-Channel MOSFET, 5.5 A, 7 A, 30 V, 8-Pin ECH ECH8661-TL-H
- RS Stock No.:
- 163-2130
- Mfr. Part No.:
- ECH8661-TL-H
- Brand:
- onsemi
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 163-2130
- Mfr. Part No.:
- ECH8661-TL-H
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 5.5 A, 7 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | ECH | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 24 mΩ, 39 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.6V | |
Maximum Power Dissipation | 1.3 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 2.3mm | |
Number of Elements per Chip | 2 | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 11.8 nC @ 10 V | |
Length | 2.9mm | |
Height | 0.9mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 5.5 A, 7 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type ECH | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 24 mΩ, 39 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.6V | ||
Maximum Power Dissipation 1.3 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 2.3mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 11.8 nC @ 10 V | ||
Length 2.9mm | ||
Height 0.9mm | ||
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