onsemi N-Channel MOSFET, 14 A, 50 V, 3-Pin DPAK RFD14N05LSM9A

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Subtotal (1 reel of 2500 units)*

£480.00

(exc. VAT)

£575.00

(inc. VAT)

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Per Reel*
2500 +£0.192£480.00

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RS Stock No.:
166-2655
Mfr. Part No.:
RFD14N05LSM9A
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

50 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Typical Gate Charge @ Vgs

40 nC @ 10 V

Length

6.73mm

Number of Elements per Chip

1

Width

6.22mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.39mm

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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