onsemi N-Channel MOSFET, 14 A, 50 V, 3-Pin DPAK RFD14N05LSM
- RS Stock No.:
- 325-7619
- Mfr. Part No.:
- RFD14N05LSM
- Brand:
- onsemi
Bulk discount available
Subtotal (1 unit)*
£0.69
(exc. VAT)
£0.83
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 31 unit(s) shipping from 27 October 2025
- Plus 94 unit(s) shipping from 27 October 2025
- Plus 21 unit(s) shipping from 03 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £0.69 |
| 10 - 99 | £0.57 |
| 100 - 499 | £0.39 |
| 500 - 999 | £0.35 |
| 1000 + | £0.32 |
*price indicative
- RS Stock No.:
- 325-7619
- Mfr. Part No.:
- RFD14N05LSM
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 50 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -10 V, +10 V | |
| Typical Gate Charge @ Vgs | 25 nC @ 5 V, 40 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 50 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Typical Gate Charge @ Vgs 25 nC @ 5 V, 40 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Width 6.22mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi N-Channel MOSFET 50 V, 3-Pin DPAK RFD14N05LSM
- onsemi N-Channel MOSFET 50 V, 3-Pin DPAK RFD14N05LSM9A
- onsemi N-Channel MOSFET 50 V, 3-Pin DPAK RFD14N05SM9A
- onsemi N-Channel MOSFET 50 V, 3-Pin IPAK RFD14N05L
- onsemi MegaFET N-Channel MOSFET 50 V, 3-Pin DPAK RFD16N05LSM9A
- onsemi MegaFET N-Channel MOSFET 50 V, 3-Pin DPAK RFD16N05SM9A
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin DPAK FDD120AN15A0
- onsemi N-Channel MOSFET 50 V, 3-Pin TO-220AB BUZ11-NR4941