onsemi PowerTrench N-Channel MOSFET, 14 A, 150 V, 3-Pin DPAK FDD120AN15A0
- RS Stock No.:
- 166-2466
- Mfr. Part No.:
- FDD120AN15A0
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£700.00
(exc. VAT)
£850.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 13 March 2026
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.28 | £700.00 |
*price indicative
- RS Stock No.:
- 166-2466
- Mfr. Part No.:
- FDD120AN15A0
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 14 A | |
Maximum Drain Source Voltage | 150 V | |
Series | PowerTrench | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 282 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 65 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 11.2 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Width | 6.22mm | |
Number of Elements per Chip | 1 | |
Length | 6.73mm | |
Height | 2.39mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 150 V | ||
Series PowerTrench | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 282 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 65 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 11.2 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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