PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	P
	Maximum Continuous Drain Current	11 A
	Maximum Drain Source Voltage	30 V
	Series	PowerTrench
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	13 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-25 V, +25 V
	Width	4mm
	Typical Gate Charge @ Vgs	44 nC @ 10 V
	Length	5mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Transistor Material	Si
	Height	1.5mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type P
	Maximum Continuous Drain Current 11 A
	Maximum Drain Source Voltage 30 V
	Series PowerTrench
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 13 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -25 V, +25 V
	Width 4mm
	Typical Gate Charge @ Vgs 44 nC @ 10 V
	Length 5mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Transistor Material Si
	Height 1.5mm
	Minimum Operating Temperature -55 °C

onsemi PowerTrench P-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC FDS6675BZ

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

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