onsemi PowerTrench P-Channel MOSFET, 8.8 A, 30 V, 8-Pin SOIC SI4435DY
- RS Stock No.:
- 166-3246
- Mfr. Part No.:
- SI4435DY
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£802.50
(exc. VAT)
£962.50
(inc. VAT)
FREE delivery for orders over £50.00
- Final 2,500 unit(s), ready to ship
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.321 | £802.50 |
*price indicative
- RS Stock No.:
- 166-3246
- Mfr. Part No.:
- SI4435DY
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 8.8 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOIC | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 35 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 17 nC @ 5 V | |
Length | 4.9mm | |
Width | 3.9mm | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Forward Diode Voltage | 1.2V | |
Height | 1.57mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 8.8 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 35 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 17 nC @ 5 V | ||
Length 4.9mm | ||
Width 3.9mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Forward Diode Voltage 1.2V | ||
Height 1.57mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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