onsemi PowerTrench P-Channel MOSFET, 8 A, 20 V, 8-Pin SOIC FDS6375
- RS Stock No.:
- 166-2604
- Mfr. Part No.:
- FDS6375
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£582.50
(exc. VAT)
£700.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 16 January 2026
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.233 | £582.50 |
*price indicative
- RS Stock No.:
- 166-2604
- Mfr. Part No.:
- FDS6375
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 8 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | SOIC | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 24 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Maximum Operating Temperature | +175 °C | |
Width | 4mm | |
Number of Elements per Chip | 1 | |
Length | 5mm | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 26 nC @ 4.5 V | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 24 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Maximum Operating Temperature +175 °C | ||
Width 4mm | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 26 nC @ 4.5 V | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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