onsemi PowerTrench P-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC FDS6675BZ
- RS Stock No.:
- 671-0598
- Mfr. Part No.:
- FDS6675BZ
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£3.43
(exc. VAT)
£4.115
(inc. VAT)
FREE delivery for orders over £50.00
- 25 unit(s) ready to ship
- Plus 5 unit(s) ready to ship from another location
- Plus 1,695 unit(s) shipping from 08 October 2025
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £0.686 | £3.43 |
50 - 95 | £0.592 | £2.96 |
100 - 495 | £0.512 | £2.56 |
500 - 995 | £0.45 | £2.25 |
1000 + | £0.41 | £2.05 |
*price indicative
- RS Stock No.:
- 671-0598
- Mfr. Part No.:
- FDS6675BZ
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 11 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOIC | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 13 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Typical Gate Charge @ Vgs | 44 nC @ 10 V | |
Width | 4mm | |
Length | 5mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 13 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 44 nC @ 10 V | ||
Width 4mm | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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