onsemi PowerTrench P-Channel MOSFET, 11 A, 30 V, 3-Pin DPAK FDD6685

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Subtotal (1 reel of 2500 units)*

£1,030.00

(exc. VAT)

£1,235.00

(inc. VAT)

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  • Plus 2,500 unit(s) shipping from 07 January 2026
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Per Reel*
2500 +£0.412£1,030.00

*price indicative

RS Stock No.:
166-2044
Mfr. Part No.:
FDD6685
Brand:
onsemi
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Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Series

PowerTrench

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Number of Elements per Chip

1

Width

6.22mm

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

17 nC @ 5 V

Minimum Operating Temperature

-55 °C

Height

2.39mm

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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