onsemi PowerTrench P-Channel MOSFET, 8.4 A, 40 V, 3-Pin DPAK FDD4685
- RS Stock No.:
- 166-3419
- Mfr. Part No.:
- FDD4685
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£820.00
(exc. VAT)
£985.00
(inc. VAT)
FREE delivery for orders over £50.00
- 5,000 unit(s) ready to ship
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.328 | £820.00 |
*price indicative
- RS Stock No.:
- 166-3419
- Mfr. Part No.:
- FDD4685
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 8.4 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | DPAK (TO-252) | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 42 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 69 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Width | 6.22mm | |
Length | 6.73mm | |
Typical Gate Charge @ Vgs | 19 nC @ 5 V | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 2.39mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 8.4 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 42 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 69 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 19 nC @ 5 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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