onsemi PowerTrench P-Channel MOSFET, 55 A, 35 V, 3-Pin DPAK FDD6637
- RS Stock No.:
- 166-2644
- Mfr. Part No.:
- FDD6637
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£1,075.00
(exc. VAT)
£1,300.00
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 2,500 left, shipping from 13 October 2025
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.43 | £1,075.00 |
*price indicative
- RS Stock No.:
- 166-2644
- Mfr. Part No.:
- FDD6637
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 55 A | |
Maximum Drain Source Voltage | 35 V | |
Package Type | DPAK (TO-252) | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 19 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 57 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Number of Elements per Chip | 1 | |
Length | 6.73mm | |
Width | 6.22mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 45 nC @ 10 V | |
Height | 2.39mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 55 A | ||
Maximum Drain Source Voltage 35 V | ||
Package Type DPAK (TO-252) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 19 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 57 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Width 6.22mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 45 nC @ 10 V | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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