Nexperia N-Channel MOSFET, 6 A, 12 V, 4-Pin WLCSP PMCM4401VNEAZ

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Subtotal (1 reel of 9000 units)*

£945.00

(exc. VAT)

£1,134.00

(inc. VAT)

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Units
Per unit
Per Reel*
9000 +£0.105£945.00

*price indicative

RS Stock No.:
153-2851
Mfr. Part No.:
PMCM4401VNEAZ
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

12 V

Package Type

WLCSP

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

12.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

8 V

Length

0.81mm

Number of Elements per Chip

1

Width

0.81mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

6 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

0.16mm

N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

12V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Low threshold voltage
Ultra small package: 0.78 x 0.78 x 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits

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