Dual N-Channel MOSFET, 6 A, 24 V, 4-Pin X1-WLB1818 Diodes Inc DMN2023UCB4-7
- RS Stock No.:
- 921-1066
- Mfr. Part No.:
- DMN2023UCB4-7
- Brand:
- DiodesZetex
Subtotal (1 pack of 20 units)**
£8.68
(exc. VAT)
£10.42
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit | Per Pack** |
---|---|---|
20 - 80 | £0.434 | £8.68 |
100 - 480 | £0.283 | £5.66 |
500 - 980 | £0.268 | £5.36 |
1000 - 2480 | £0.223 | £4.46 |
2500 + | £0.212 | £4.24 |
**price indicative
- RS Stock No.:
- 921-1066
- Mfr. Part No.:
- DMN2023UCB4-7
- Brand:
- DiodesZetex
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 6 A | |
Maximum Drain Source Voltage | 24 V | |
Package Type | X1-WLB1818 | |
Mounting Type | Surface Mount | |
Pin Count | 4 | |
Maximum Drain Source Resistance | 40 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1.3V | |
Minimum Gate Threshold Voltage | 0.5V | |
Maximum Power Dissipation | 1.45 W | |
Transistor Configuration | Common Drain | |
Maximum Gate Source Voltage | -12 V, +12 V | |
Length | 1.8mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 2 | |
Typical Gate Charge @ Vgs | 29 nC @ 4.5 V | |
Width | 1.8mm | |
Height | 0.24mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1V | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 24 V | ||
Package Type X1-WLB1818 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.3V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 1.45 W | ||
Transistor Configuration Common Drain | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Length 1.8mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 29 nC @ 4.5 V | ||
Width 1.8mm | ||
Height 0.24mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
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