Nexperia N-Channel MOSFET, 3.9 A, 30 V, 3-Pin SOT-23 PMV50ENEAR

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Subtotal (1 reel of 3000 units)*

£303.00

(exc. VAT)

£363.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.101£303.00

*price indicative

RS Stock No.:
152-7154
Mfr. Part No.:
PMV50ENEAR
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

69 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

6 nC @ 10 V

Height

1mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

30V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits

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