Nexperia P-Channel MOSFET, 2.4 A, 30 V, 4-Pin DFN1010D-3, SOT1215 PMXB120EPEZ

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Subtotal (1 pack of 25 units)*

£6.30

(exc. VAT)

£7.55

(inc. VAT)

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Packaging Options:
RS Stock No.:
151-3227
Mfr. Part No.:
PMXB120EPEZ
Brand:
Nexperia
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Brand

Nexperia

Channel Type

P

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

30 V

Package Type

DFN1010D-3, SOT1215

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

187 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-2.5V

Minimum Gate Threshold Voltage

-1V

Maximum Power Dissipation

8.33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

1.05mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

6.2 nC @ 10 V

Length

1.15mm

Minimum Operating Temperature

-55 °C

Height

0.36mm

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

30 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV HBM
Drain-source on-state resistance RDSon = 350 mΩ

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