Nexperia P-Channel MOSFET, 2.9 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB75UPEZ

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Subtotal (1 pack of 50 units)*

£7.55

(exc. VAT)

£9.05

(inc. VAT)

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50 +£0.151£7.55

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Packaging Options:
RS Stock No.:
153-1936
Mfr. Part No.:
PMXB75UPEZ
Brand:
Nexperia
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Brand

Nexperia

Channel Type

P

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

20 V

Package Type

DFN1010D-3, SOT1215

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

950 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-1V

Minimum Gate Threshold Voltage

-0.4V

Maximum Power Dissipation

8330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

8 V

Width

1.05mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

6.8 nC @ 10 V

Length

1.15mm

Height

0.36mm

Minimum Operating Temperature

-55 °C

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance RDSon = 69 mΩ
Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
High-side load switch and charging switch for portable devices
Power management in battery driven portables
LED driver
DC-to-DC converter

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