Nexperia P-Channel MOSFET, 5.6 A, -20 V, 3-Pin SOT-23 PMV27UPEAR

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Subtotal (1 reel of 3000 units)*

£366.00

(exc. VAT)

£438.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.122£366.00

*price indicative

RS Stock No.:
153-0707
Mfr. Part No.:
PMV27UPEAR
Brand:
Nexperia
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Brand

Nexperia

Channel Type

P

Maximum Continuous Drain Current

5.6 A

Maximum Drain Source Voltage

-20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

63 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-0.95V

Minimum Gate Threshold Voltage

-0.45V

Maximum Power Dissipation

4150 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

8 V

Number of Elements per Chip

1

Width

1.4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

14.7 nC @ 10 V

Length

3mm

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Height

1mm

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability: Ptot = 980 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM
AEC-Q101 qualified
LED driver
Power management
High-side loadswitch
Switching circuits

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