P-Channel MOSFET, 5.6 A, -20 V, 3-Pin SOT-23 Nexperia PMV27UPEAR
- RS Stock No.:
- 153-1876
- Mfr. Part No.:
- PMV27UPEAR
- Brand:
- Nexperia
250 In stock - FREE next working day delivery available
Added
Price Each (In a Pack of 25)
£0.316
(exc. VAT)
£0.379
(inc. VAT)
| Units | Per unit | Per Pack* |
| 25 - 225 | £0.316 | £7.90 |
| 250 - 600 | £0.164 | £4.10 |
| 625 - 1225 | £0.152 | £3.80 |
| 1250 - 2475 | £0.148 | £3.70 |
| 2500 + | £0.145 | £3.625 |
| *price indicative | ||
- RS Stock No.:
- 153-1876
- Mfr. Part No.:
- PMV27UPEAR
- Brand:
- Nexperia
Technical Reference
Legislation and Compliance
Product Details
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability: Ptot = 980 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM
AEC-Q101 qualified
LED driver
Power management
High-side loadswitch
Switching circuits
Low threshold voltage
Very fast switching
Enhanced power dissipation capability: Ptot = 980 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM
AEC-Q101 qualified
LED driver
Power management
High-side loadswitch
Switching circuits
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 5.6 A |
| Maximum Drain Source Voltage | -20 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 63 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | -0.95V |
| Minimum Gate Threshold Voltage | -0.45V |
| Maximum Power Dissipation | 4150 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 8 V |
| Maximum Operating Temperature | +150 °C |
| Width | 1.4mm |
| Number of Elements per Chip | 1 |
| Length | 3mm |
| Typical Gate Charge @ Vgs | 14.7 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Automotive Standard | AEC-Q101 |
| Height | 1mm |
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