Nexperia P-Channel MOSFET, 5.6 A, -20 V, 3-Pin SOT-23 PMV27UPEAR
- RS Stock No.:
- 153-1876
- Mfr. Part No.:
- PMV27UPEAR
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 25 units)*
£7.575
(exc. VAT)
£9.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 100 unit(s) shipping from 13 October 2025
- Plus 6,975 unit(s) shipping from 20 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | £0.303 | £7.58 |
| 250 - 600 | £0.158 | £3.95 |
| 625 - 1225 | £0.146 | £3.65 |
| 1250 - 2475 | £0.142 | £3.55 |
| 2500 + | £0.14 | £3.50 |
*price indicative
- RS Stock No.:
- 153-1876
- Mfr. Part No.:
- PMV27UPEAR
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 5.6 A | |
| Maximum Drain Source Voltage | -20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 63 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | -0.95V | |
| Minimum Gate Threshold Voltage | -0.45V | |
| Maximum Power Dissipation | 4150 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 8 V | |
| Width | 1.4mm | |
| Typical Gate Charge @ Vgs | 14.7 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 3mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current 5.6 A | ||
Maximum Drain Source Voltage -20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 63 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage -0.95V | ||
Minimum Gate Threshold Voltage -0.45V | ||
Maximum Power Dissipation 4150 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 8 V | ||
Width 1.4mm | ||
Typical Gate Charge @ Vgs 14.7 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Height 1mm | ||
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability: Ptot = 980 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM
AEC-Q101 qualified
LED driver
Power management
High-side loadswitch
Switching circuits
Low threshold voltage
Very fast switching
Enhanced power dissipation capability: Ptot = 980 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM
AEC-Q101 qualified
LED driver
Power management
High-side loadswitch
Switching circuits
Related links
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