P-Channel MOSFET, 3.3 A, -20 V, 3-Pin SOT-23 Nexperia PMV65XPEAR
- RS Stock No.:
- 151-3159
- Mfr. Part No.:
- PMV65XPEAR
- Brand:
- Nexperia
1450 In stock - FREE next working day delivery available
Added
Price Each (In a Pack of 50)
£0.322
(exc. VAT)
£0.386
(inc. VAT)
| Units | Per unit | Per Pack* |
| 50 - 200 | £0.322 | £16.10 |
| 250 - 450 | £0.178 | £8.90 |
| 500 - 1200 | £0.156 | £7.80 |
| 1250 - 2450 | £0.142 | £7.10 |
| 2500 + | £0.139 | £6.95 |
| *price indicative | ||
- RS Stock No.:
- 151-3159
- Mfr. Part No.:
- PMV65XPEAR
- Brand:
- Nexperia
Technical Reference
Legislation and Compliance
Product Details
Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.
AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating
20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Very fast switching
Enhanced power dissipation capability: Ptot = 890 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM
AEC-Q101 qualified
Very fast switching
Enhanced power dissipation capability: Ptot = 890 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM
AEC-Q101 qualified
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 3.3 A |
| Maximum Drain Source Voltage | -20 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 125 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | -1.25V |
| Minimum Gate Threshold Voltage | -0.75V |
| Maximum Power Dissipation | 6250 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 12 V |
| Length | 3mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Width | 1.4mm |
| Typical Gate Charge @ Vgs | 5 nC @ 10 V |
| Automotive Standard | AEC-Q101 |
| Minimum Operating Temperature | -55 °C |
| Height | 1.1mm |
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