Nexperia P-Channel MOSFET, 3.3 A, -20 V, 3-Pin SOT-23 PMV65XPEAR

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Subtotal (1 pack of 50 units)*

£16.60

(exc. VAT)

£19.90

(inc. VAT)

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50 - 200£0.332£16.60
250 - 450£0.183£9.15
500 - 1200£0.161£8.05
1250 - 2450£0.147£7.35
2500 +£0.143£7.15

*price indicative

Packaging Options:
RS Stock No.:
151-3159
Mfr. Part No.:
PMV65XPEAR
Brand:
Nexperia
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Brand

Nexperia

Channel Type

P

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

-20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-1.25V

Minimum Gate Threshold Voltage

-0.75V

Maximum Power Dissipation

6250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

12 V

Typical Gate Charge @ Vgs

5 nC @ 10 V

Width

1.4mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3mm

Height

1.1mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.

AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology
Very fast switching
Enhanced power dissipation capability: Ptot = 890 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM
AEC-Q101 qualified

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