Nexperia P-Channel MOSFET, 3.3 A, -20 V, 3-Pin SOT-23 PMV65XPEAR
- RS Stock No.:
- 151-3159
- Mfr. Part No.:
- PMV65XPEAR
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 50 units)*
£16.60
(exc. VAT)
£19.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 850 unit(s) shipping from 27 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | £0.332 | £16.60 |
| 250 - 450 | £0.183 | £9.15 |
| 500 - 1200 | £0.161 | £8.05 |
| 1250 - 2450 | £0.147 | £7.35 |
| 2500 + | £0.143 | £7.15 |
*price indicative
- RS Stock No.:
- 151-3159
- Mfr. Part No.:
- PMV65XPEAR
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.3 A | |
| Maximum Drain Source Voltage | -20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 125 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | -1.25V | |
| Minimum Gate Threshold Voltage | -0.75V | |
| Maximum Power Dissipation | 6250 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 12 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 5 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.4mm | |
| Length | 3mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.3 A | ||
Maximum Drain Source Voltage -20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage -1.25V | ||
Minimum Gate Threshold Voltage -0.75V | ||
Maximum Power Dissipation 6250 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 12 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 5 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.4mm | ||
Length 3mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.
AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating
20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Very fast switching
Enhanced power dissipation capability: Ptot = 890 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM
AEC-Q101 qualified
Very fast switching
Enhanced power dissipation capability: Ptot = 890 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM
AEC-Q101 qualified
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