ROHM SiC N-Channel MOSFET, 93 A, 650 V, 3-Pin TO-247N SCT3022ALGC11
- RS Stock No.:
- 150-1518
- Mfr. Part No.:
- SCT3022ALGC11
- Brand:
- ROHM
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 150-1518
- Mfr. Part No.:
- SCT3022ALGC11
- Brand:
- ROHM
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 93 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247N | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 29 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.6V | |
| Minimum Gate Threshold Voltage | 2.7V | |
| Maximum Power Dissipation | 262 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 22 V | |
| Transistor Material | SiC | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 133 nC @ 18 V | |
| Width | 5mm | |
| Number of Elements per Chip | 1 | |
| Length | 16mm | |
| Height | 21mm | |
Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 93 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247N | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 29 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.6V | ||
Minimum Gate Threshold Voltage 2.7V | ||
Maximum Power Dissipation 262 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 22 V | ||
Transistor Material SiC | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 133 nC @ 18 V | ||
Width 5mm | ||
Number of Elements per Chip 1 | ||
Length 16mm | ||
Height 21mm | ||
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