onsemi NTMFS006N N-Channel MOSFET, 93 A, 120 V, 5-Pin DFN NTMFS006N12MCT1G
- RS Stock No.:
- 221-6721
- Mfr. Part No.:
- NTMFS006N12MCT1G
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 221-6721
- Mfr. Part No.:
- NTMFS006N12MCT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 93 A | |
| Maximum Drain Source Voltage | 120 V | |
| Package Type | DFN | |
| Series | NTMFS006N | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 0.006 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 93 A | ||
Maximum Drain Source Voltage 120 V | ||
Package Type DFN | ||
Series NTMFS006N | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 0.006 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The ON Semiconductor N-Channel MV MOSFET is produced using advanced power trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
Low capacitance to minimize driver losses
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