N-Channel MOSFET, 67 A, 60 V, 5-Pin DFN onsemi NVMFS5H663NLT1G
- RS Stock No.:
- 185-8153
- Mfr. Part No.:
- NVMFS5H663NLT1G
- Brand:
- onsemi
3000 In stock - FREE next working day delivery available
Added
Price Each (On a Reel of 1500)
£0.409
(exc. VAT)
£0.491
(inc. VAT)
| Units | Per unit | Per Reel* |
| 1500 + | £0.409 | £613.50 |
| *price indicative | ||
- RS Stock No.:
- 185-8153
- Mfr. Part No.:
- NVMFS5H663NLT1G
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Non Compliant
- COO (Country of Origin):
- MY
Product Details
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
PPAP Capable
These Devices are Pb−Free
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
PPAP Capable
These Devices are Pb−Free
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 67 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 5 |
| Maximum Drain Source Resistance | 10 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 63 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Length | 5.1mm |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V |
| Width | 6.1mm |
| Forward Diode Voltage | 1.2V |
| Automotive Standard | AEC-Q101 |
| Height | 1.05mm |
| Minimum Operating Temperature | -55 °C |