onsemi N-Channel MOSFET, 67 A, 60 V, 5-Pin DFN NVMFS5H663NLT1G
- RS Stock No.:
- 185-8153
- Mfr. Part No.:
- NVMFS5H663NLT1G
- Brand:
- onsemi
Subtotal (1 reel of 1500 units)*
£456.00
(exc. VAT)
£547.50
(inc. VAT)
FREE delivery for orders over £50.00
- Final 1,500 unit(s), ready to ship
Units | Per unit | Per Reel* |
|---|---|---|
| 1500 + | £0.304 | £456.00 |
*price indicative
- RS Stock No.:
- 185-8153
- Mfr. Part No.:
- NVMFS5H663NLT1G
- Brand:
- onsemi
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 67 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 10 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 63 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V | |
| Width | 6.1mm | |
| Length | 5.1mm | |
| Height | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 67 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 10 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 63 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 17 nC @ 10 V | ||
Width 6.1mm | ||
Length 5.1mm | ||
Height 1.05mm | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Non Compliant
- COO (Country of Origin):
- MY
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
PPAP Capable
These Devices are Pb−Free
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