SupreMOS® MOSFET, Fairchild Semiconductor

Fairchild brings a new generation of 600V Super-Junction MOSFETs - SupreMOS®.
The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	73 A
	Maximum Drain Source Voltage	600 V
	Series	SupreMOS
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	38 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	543 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Width	4.82mm
	Number of Elements per Chip	1
	Length	15.87mm
	Typical Gate Charge @ Vgs	230 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Height	20.82mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 73 A
	Maximum Drain Source Voltage 600 V
	Series SupreMOS
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 38 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 543 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Width 4.82mm
	Number of Elements per Chip 1
	Length 15.87mm
	Typical Gate Charge @ Vgs 230 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Height 20.82mm
	Minimum Operating Temperature -55 °C

onsemi SupreMOS N-Channel MOSFET, 73 A, 600 V, 3-Pin TO-247 FCH76N60NF

SupreMOS® MOSFET, Fairchild Semiconductor

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