Infineon HEXFET N-Channel MOSFET, 73 A, 100 V, 3-Pin TO-220AB IRFB4610PBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

73 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.69mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

90 nC @ 10 V

Length

10.54mm

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

8.77mm