Infineon IPP Type N-Channel MOSFET, 73 A, 100 V, 3-Pin TO-220 IPP083N10N5AKSA1
- RS Stock No.:
- 258-3893
- Mfr. Part No.:
- IPP083N10N5AKSA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 258-3893
- Mfr. Part No.:
- IPP083N10N5AKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 73A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 73A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series IPP | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.
Ideal for high switching frequency
Output capacitance reduction of up to 44%
Less paralleling required
Increased power density
Low voltage overshoot
Related links
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