onsemi QFET N-Channel MOSFET, 8 A, 900 V, 3-Pin TO-220F FQPF9N90CT

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RS Stock No.:
145-4390
Mfr. Part No.:
FQPF9N90CT
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

900 V

Package Type

TO-220F

Series

QFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

45 nC @ 10 V

Width

4.9mm

Number of Elements per Chip

1

Transistor Material

Si

Length

10.36mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

16.07mm

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


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ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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