Vishay TrenchFET N-Channel MOSFET, 45.5 A, 30 V, 8-Pin PowerPAK SO-8 SIRA88DP-T1-GE3
- RS Stock No.:
- 134-9696
- Mfr. Part No.:
- SIRA88DP-T1-GE3
- Brand:
- Vishay
Subtotal (1 pack of 25 units)*
£3.25
(exc. VAT)
£4.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 29 May 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | £0.13 | £3.25 |
| 250 - 600 | £0.126 | £3.15 |
| 625 - 1225 | £0.123 | £3.08 |
| 1250 - 2475 | £0.12 | £3.00 |
| 2500 + | £0.117 | £2.93 |
*price indicative
- RS Stock No.:
- 134-9696
- Mfr. Part No.:
- SIRA88DP-T1-GE3
- Brand:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 45.5 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerPAK SO-8 | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 10 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 1.1V | |
| Maximum Power Dissipation | 25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +20 V | |
| Width | 5.26mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 16.8 nC @ 10 V | |
| Length | 6.25mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.1V | |
| Height | 1.12mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 45.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAK SO-8 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 10 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1.1V | ||
Maximum Power Dissipation 25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +20 V | ||
Width 5.26mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 16.8 nC @ 10 V | ||
Length 6.25mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.1V | ||
Height 1.12mm | ||
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
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