Vishay TrenchFET N-Channel MOSFET, 45.5 A, 30 V, 8-Pin PowerPAK SO-8 SIRA88DP-T1-GE3

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

45.5 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Width

5.26mm

Typical Gate Charge @ Vgs

16.8 nC @ 10 V

Length

6.25mm

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.1V

Minimum Operating Temperature

-55 °C

Height

1.12mm