Vishay E Series N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-220AB SIHP065N60E-GE3
- RS Stock No.:
- 134-9170
- Mfr. Part No.:
- SIHP065N60E-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)*
£179.75
(exc. VAT)
£215.70
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,950 unit(s) shipping from 24 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £3.595 | £179.75 |
| 100 + | £3.505 | £175.25 |
*price indicative
- RS Stock No.:
- 134-9170
- Mfr. Part No.:
- SIHP065N60E-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220AB | |
| Series | E Series | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 65 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.51mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 49 nC @ 10 V | |
| Width | 4.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.49mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220AB | ||
Series E Series | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 65 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.51mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 49 nC @ 10 V | ||
Width 4.65mm | ||
Minimum Operating Temperature -55 °C | ||
Height 15.49mm | ||
Forward Diode Voltage 1.2V | ||
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