Vishay E Series N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-220AB SIHP065N60E-GE3
- RS Stock No.:
- 134-9170
- Mfr. Part No.:
- SIHP065N60E-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)*
£182.75
(exc. VAT)
£219.30
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 13 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £3.655 | £182.75 |
| 100 + | £3.564 | £178.20 |
*price indicative
- RS Stock No.:
- 134-9170
- Mfr. Part No.:
- SIHP065N60E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220AB | |
| Series | E Series | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 65 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 49 nC @ 10 V | |
| Length | 10.51mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.65mm | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.49mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220AB | ||
Series E Series | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 65 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 49 nC @ 10 V | ||
Length 10.51mm | ||
Number of Elements per Chip 1 | ||
Width 4.65mm | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 15.49mm | ||
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay E Series N-Channel MOSFET 600 V, 3-Pin TO-220AB SIHP065N60E-GE3
- Vishay E Series N-Channel MOSFET 850 V, 3-Pin TO-220AB SIHP21N80AEF-GE3
- Vishay E Series N-Channel MOSFET 850 V, 3-Pin TO-220AB SiHP17N80AEF-GE3
- Vishay E-Series N-Channel MOSFET 800 V, 3-Pin TO-220AB SIHP5N80AE-GE3
- Vishay E Series N-Channel MOSFET 650 V, 3-Pin TO-220AB SiHP080N60E-GE3
- Vishay E Series N-Channel MOSFET 850 V, 3-Pin TO-220AB SiHP6N80AE-GE3
- Vishay E Series N-Channel MOSFET 600 V, 3-Pin TO-247AC SiHG47N60E-GE3
- Vishay E Series N-Channel MOSFET 600 V, 3-Pin D2PAK SIHB30N60E-GE3