Infineon CoolMOS™ C3 N-Channel MOSFET, 6 A, 800 V, 3-Pin TO-220 SPP06N80C3XKSA1
- RS Stock No.:
- 110-7776
- Mfr. Part No.:
- SPP06N80C3XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£10.60
(exc. VAT)
£12.70
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 100 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.06 | £10.60 |
| 50 - 90 | £1.006 | £10.06 |
| 100 - 240 | £0.905 | £9.05 |
| 250 + | £0.902 | £9.02 |
*price indicative
- RS Stock No.:
- 110-7776
- Mfr. Part No.:
- SPP06N80C3XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | CoolMOS™ C3 | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 900 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 83 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.36mm | |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.57mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 15.95mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 800 V | ||
Series CoolMOS™ C3 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 900 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 83 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 31 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4.57mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 15.95mm | ||
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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