Infineon CoolMOS™ C3 N-Channel MOSFET, 17 A, 800 V, 3-Pin TO-220 SPP17N80C3XKSA1
- RS Stock No.:
- 753-3194
- Mfr. Part No.:
- SPP17N80C3XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£3.59
(exc. VAT)
£4.31
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 90 unit(s) ready to ship
- Plus 1 unit(s) ready to ship from another location
- Plus 195 unit(s) shipping from 08 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £3.59 |
| 10 - 24 | £3.41 |
| 25 - 49 | £3.34 |
| 50 - 99 | £3.12 |
| 100 + | £2.87 |
*price indicative
- RS Stock No.:
- 753-3194
- Mfr. Part No.:
- SPP17N80C3XKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | CoolMOS™ C3 | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 290 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 227 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 88 nC @ 10 V | |
| Width | 4.57mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.36mm | |
| Height | 9.45mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 800 V | ||
Series CoolMOS™ C3 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 290 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 227 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 88 nC @ 10 V | ||
Width 4.57mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 10.36mm | ||
Height 9.45mm | ||
Minimum Operating Temperature -55 °C | ||
Related links
- Infineon CoolMOS™ C3 N-Channel MOSFET 800 V, 3-Pin TO-220 SPP17N80C3XKSA1
- Infineon CoolMOS™ C3 N-Channel MOSFET 800 V, 3-Pin TO-220 FP SPA17N80C3XKSA1
- Infineon CoolMOS™ C3 N-Channel MOSFET 800 V, 3-Pin TO-247 SPW17N80C3FKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin TO-220 IPP80R280P7XKSA1
- Infineon N-Channel MOSFET 800 V, 3-Pin TO-220 IPA80R280P7XKSA1
- STMicroelectronics MDmesh N-Channel MOSFET 800 V, 3-Pin TO-220 STP18NM80
- Infineon CoolMOS™ Silicon N-Channel MOSFET 800 V, 3-Pin TO-220 FP IPAN80R280P7XKSA1
- STMicroelectronics MDmesh N-Channel MOSFET 800 V, 3-Pin D2PAK STB18NM80