Infineon CoolMOS™ C3 N-Channel MOSFET, 17 A, 800 V, 3-Pin TO-220 FP SPA17N80C3XKSA1
- RS Stock No.:
- 753-3153
- Mfr. Part No.:
- SPA17N80C3XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£3.60
(exc. VAT)
£4.32
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 8 unit(s) ready to ship
- Plus 250 unit(s) shipping from 11 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £3.60 |
| 5 - 9 | £3.54 |
| 10 - 14 | £3.42 |
| 15 - 24 | £3.39 |
| 25 + | £3.27 |
*price indicative
- RS Stock No.:
- 753-3153
- Mfr. Part No.:
- SPA17N80C3XKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-220 FP | |
| Series | CoolMOS™ C3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 290 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 42 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 91 nC @ 10 V | |
| Width | 4.826mm | |
| Length | 10.627mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Height | 9.808mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220 FP | ||
Series CoolMOS™ C3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 290 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 42 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 91 nC @ 10 V | ||
Width 4.826mm | ||
Length 10.627mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 9.808mm | ||
Minimum Operating Temperature -55 °C | ||
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