Vishay TrenchFET N channel-Channel Power MOSFET, 42.3 A, 70 V N, 8-Pin PowerPAK SISS176LDN-T1-BE3
- RS Stock No.:
- 851-508
- Mfr. Part No.:
- SISS176LDN-T1-BE3
- Brand:
- Vishay
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|---|---|
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| 500 - 999 | £0.47 |
| 1000 + | £0.42 |
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- RS Stock No.:
- 851-508
- Mfr. Part No.:
- SISS176LDN-T1-BE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 42.3A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0125Ω | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12.6nC | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.04mm | |
| Length | 6.05mm | |
| Width | 5.25mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 42.3A | ||
Maximum Drain Source Voltage Vds 70V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0125Ω | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12.6nC | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 175°C | ||
Height 1.04mm | ||
Length 6.05mm | ||
Width 5.25mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET offers high efficiency in power management, featuring a robust construction that supports various electrical demands in Advanced electronic applications.
TrenchFET Gen IV technology enhances performance
Very low R DS(on) at various gate voltages ensures efficiency
Comprehensive testing guarantees reliability in operation
Lead (Pb)-free and halogen-free composition aligns with environmental standards
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