Vishay TrenchFET N channel-Channel Power MOSFET, 40 A, 80 V N, 8-Pin PowerPAK SIR178DP-T1-BE3
- RS Stock No.:
- 851-502
- Mfr. Part No.:
- SIR178DP-T1-BE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
£2.13
(exc. VAT)
£2.56
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 04 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | £2.13 |
| 10 - 99 | £1.37 |
| 100 - 499 | £0.94 |
| 500 - 999 | £0.80 |
| 1000 + | £0.73 |
*price indicative
- RS Stock No.:
- 851-502
- Mfr. Part No.:
- SIR178DP-T1-BE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0029Ω | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 69.5nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Height | 1.04mm | |
| Length | 6.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0029Ω | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 69.5nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 Qualified | ||
Height 1.04mm | ||
Length 6.05mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TW
The Vishay high-performance N-Channel power MOSFET designed for efficient energy management. Its primary function is to optimise conduction with low power loss, making it suitable for various power applications.
TrenchFET Gen IV technology ensures superior performance
Extremely low on-state resistance minimises conduction losses
Supports low voltage gate drive for enhanced efficiency
Completely tested for reliability under R and UIS conditions
Related links
- Vishay TrenchFET N channel-Channel Power MOSFET 80 V N, 8-Pin PowerPAK SIR178DP-T1-UE3
- Vishay TrenchFET N channel-Channel Power MOSFET 70 V N, 8-Pin PowerPAK SISS178LDN-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 70 V N, 8-Pin PowerPAK SISS176LDN-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 250 V N, 8-Pin PowerPAK SIR692DP-T1-BE3
- Vishay SI34 N channel-Channel Power MOSFET -20 V P, 8-Pin PowerPAK SI3493DDV-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 60 V N, 8-Pin PowerPAK SIHH150N60E-T1-FE3
- Vishay TrenchFET N channel-Channel Power MOSFET 60 V N, 8-Pin PowerPAK SIR692DP-T1-UE3
- Vishay TrenchFET N channel-Channel Power MOSFET 80 V N, 8-Pin SO-8 SIDR178DP-T1-RE3