Vishay MXP120A N channel-Channel MOSFET, 61 A, 1.2 kV Enhancement, 4-Pin TO-247AD MXP120A250SE-T1GE3
- RS Stock No.:
- 847-941
- Mfr. Part No.:
- MXP120A250SE-T1GE3
- Brand:
- Vishay
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- RS Stock No.:
- 847-941
- Mfr. Part No.:
- MXP120A250SE-T1GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-247AD | |
| Series | MXP120A | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 109W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | 4.7V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 16.13mm | |
| Height | 5.21mm | |
| Length | 23.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-247AD | ||
Series MXP120A | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 109W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf 4.7V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 16.13mm | ||
Height 5.21mm | ||
Length 23.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-Channel MOSFETs is designed for efficient switching applications, ensuring reliable operation in demanding environments.
Fast switching speed enhances system efficiency
Short circuit withstand time of 2.5 μs increases device reliability
Maximum power dissipation rating of 85 W supports high-performance applications
Drain-source voltage capability of 1200 V provides robust operation
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