ROHM RJ1N04BBHT N-Channel MOSFET, 100 A, 80 V, 3-Pin D2PAK RJ1N04BBHTL1
- RS Stock No.:
- 687-400
- Mfr. Part No.:
- RJ1N04BBHTL1
- Brand:
- ROHM
Bulk discount available
Subtotal (1 tape of 2 units)*
£3.20
(exc. VAT)
£3.84
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 24 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
---|---|---|
2 - 18 | £1.60 | £3.20 |
20 - 98 | £1.41 | £2.82 |
100 - 198 | £1.265 | £2.53 |
200 + | £0.995 | £1.99 |
*price indicative
- RS Stock No.:
- 687-400
- Mfr. Part No.:
- RJ1N04BBHTL1
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | ROHM | |
Channel Type | N | |
Maximum Continuous Drain Current | 100 A | |
Maximum Drain Source Voltage | 80 V | |
Series | RJ1N04BBHT | |
Package Type | TO-263AB-3LSHYAD | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 80 V | ||
Series RJ1N04BBHT | ||
Package Type TO-263AB-3LSHYAD | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- JP
The ROHM N channel power MOSFET designed to deliver outstanding efficiency in demanding applications. With a maximal drain-source voltage of 80V and a continuous drain current of 100A, it is tailored for effective switching tasks in a variety of circuits, making it ideal for motor drives and DC/DC converters. Its low on-resistance of 5.3mΩ ensures that energy loss is minimised, resulting in better thermal management and reliable operation under high-power conditions. Compliant with RoHS standards, this device not only meets environmental requirements but also assures high reliability and safety for end-users in diverse electronics.
Low on resistance for effective power management and reduced thermal load
Capable of handling continuous drain currents of ±100A, ideal for high-performance designs
Comprehensive testing for robustness, including 100% Rg and UIS testing
Pb free plating ensures compliance with international environmental standards
Halogen-free construction contributes to environmental sustainability
Robust packaging specifications, including embossed tape for dependable transport and storage
Operating temperature range from -55 to +150°C provides operational flexibility across diverse environments
Capable of handling continuous drain currents of ±100A, ideal for high-performance designs
Comprehensive testing for robustness, including 100% Rg and UIS testing
Pb free plating ensures compliance with international environmental standards
Halogen-free construction contributes to environmental sustainability
Robust packaging specifications, including embossed tape for dependable transport and storage
Operating temperature range from -55 to +150°C provides operational flexibility across diverse environments
Related links
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP037N08N3GXKSA1
- Nexperia N-Channel MOSFET 80 V, 5-Pin LFPAK PSMN4R5-80YSFX
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin TO-220 FP IPA028N08N3GXKSA1
- Nexperia N-Channel MOSFET 80 V127
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 8-Pin TDSON BSC047N08NS3GATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin TDSON BSC040N08NS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin TDSON BSC030N08NS5ATMA1
- Vishay N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR584DP-T1-RE3