N-Channel MOSFET, 100 A, 80 V, 3-Pin TO-220 FP Infineon IPA028N08N3GXKSA1

RS Stock No.:: 165-8119
Mfr. Part No.:: IPA028N08N3GXKSA1
Brand:: Infineon

N-Channel MOSFET, 100 A, 80 V, 3-Pin TO-220 FP Infineon IPA028N08N3GXKSA1

Available to back order for despatch when stock is available

Price Each (In a Tube of 50)

£5.459

(exc. VAT)

£6.551

(inc. VAT)

Units	Per unit	Per Tube*
50 +	£5.459	£272.95
*price indicative

RS Stock No.:: 165-8119
Mfr. Part No.:: IPA028N08N3GXKSA1
Brand:: Infineon

IPA028N08N3 G, OptiMOS3 Power MOSFET Transistor
ESD Control Selection Guide V1

RS Stock No.:: 165-8119
Mfr. Part No.:: IPA028N08N3GXKSA1
Brand:: Infineon

IPA028N08N3 G, OptiMOS3 Power MOSFET Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	80 V
Package Type	TO-220 FP
Series	OptiMOS 3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	2.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	42 W
Transistor Configuration	Single
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	80 V
Package Type	TO-220 FP
Series	OptiMOS 3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	2.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	42 W
Transistor Configuration	Single
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 100 A, 80 V, 3-Pin TO-220 FP Infineon IPA028N08N3GXKSA1

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

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