ROHM HT8KF6H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSMT-8 HT8KF6HTB1
- RS Stock No.:
- 687-371
- Mfr. Part No.:
- HT8KF6HTB1
- Brand:
- ROHM
Subtotal (1 tape of 2 units)*
£1.29
(exc. VAT)
£1.548
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 22 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 2 + | £0.645 | £1.29 |
*price indicative
- RS Stock No.:
- 687-371
- Mfr. Part No.:
- HT8KF6HTB1
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Dual N | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | HSMT-8 | |
| Series | HT8KF6H | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 214mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 14W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.45mm | |
| Height | 0.8mm | |
| Width | 3.4 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Dual N | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type HSMT-8 | ||
Series HT8KF6H | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 214mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 14W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.45mm | ||
Height 0.8mm | ||
Width 3.4 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The ROHM N channel power MOSFET designed for efficient power management in various applications. This component provides robust electrical characteristics, including a maximum continuous drain current of ±7.0A, ensuring reliable operation under high loads. Its Pb-free and halogen-free materials meet RoHS standards, contributing to environmentally friendly designs. This MOSFET's thermal resistance is optimised, allowing for effective heat dissipation, thus improving device longevity and performance in various electronic applications.
Low on resistance for improved efficiency
High power capacity in a compact HSMT8 mould package
Complies with RoHS regulations with Pb free plating
Halogen-free design to support eco-friendly initiatives
Versatile application in motor drives and power management systems
High maximum junction temperature rating of 150°C
Impressive maximum power dissipation of 14W
Reliable avalanche characteristics with a maximum energy of 0.24mJ
Related links
- ROHM HT8K Dual N-Channel MOSFET 100 V, 8-Pin HSMT8 HT8KE5TB1
- ROHM HT8MD5HT Dual N-Channel MOSFET 80 V, 8-Pin HSMT8 HT8MD5HTB1
- ROHM HT8K Dual N-Channel MOSFET 100 V, 8-Pin HSMT8 HT8KE6TB1
- ROHM HT8KE6 Dual N-Channel MOSFET 100 V, 8-Pin HSMT8 HT8KE6HTB1
- ROHM HP8 Dual N-Channel MOSFET 60 V, 8-Pin HSMT8 HT8KC5TB1
- ROHM HT8 Dual N-Channel MOSFET 60 V, 8-Pin HSMT8 HT8KC6TB1
- ROHM N-Channel MOSFET 150 V, 8-Pin HSMT8 RH6R025BHTB1
- ROHM RQ3 N-Channel MOSFET 60 V, 8-Pin HSMT8 RQ3L060BGTB1