ROHM HT8KF6H Dual N-Channel MOSFET, 7 A, 150 V, 8-Pin HSMT8 HT8KF6HTB1

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Subtotal (1 tape of 2 units)*

£1.27

(exc. VAT)

£1.524

(inc. VAT)

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Temporarily out of stock
  • 999,999,998 unit(s) shipping from 14 November 2025
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Units
Per unit
Per Tape*
2 - 18£0.635£1.27
20 - 48£0.56£1.12
50 - 198£0.505£1.01
200 - 998£0.405£0.81
1000 +£0.395£0.79

*price indicative

Packaging Options:
RS Stock No.:
687-371
Mfr. Part No.:
HT8KF6HTB1
Brand:
ROHM
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Brand

ROHM

Channel Type

Dual N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

150 V

Package Type

HSMT8

Series

HT8KF6H

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
JP
The ROHM N channel power MOSFET designed for efficient power management in various applications. This component provides robust electrical characteristics, including a maximum continuous drain current of ±7.0A, ensuring reliable operation under high loads. Its Pb-free and halogen-free materials meet RoHS standards, contributing to environmentally friendly designs. This MOSFET's thermal resistance is optimised, allowing for effective heat dissipation, thus improving device longevity and performance in various electronic applications.

Low on resistance for improved efficiency
High power capacity in a compact HSMT8 mould package
Complies with RoHS regulations with Pb free plating
Halogen-free design to support eco-friendly initiatives
Versatile application in motor drives and power management systems
High maximum junction temperature rating of 150°C
Impressive maximum power dissipation of 14W
Reliable avalanche characteristics with a maximum energy of 0.24mJ

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