ROHM RQ3P120BKFRA N-Channel MOSFET, 12 A, 100 V, 8-Pin HSMT8AG RQ3P120BKFRATCB

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Subtotal (1 tape of 2 units)*

£1.07

(exc. VAT)

£1.284

(inc. VAT)

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  • Shipping from 27 October 2025
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Units
Per unit
Per Tape*
2 - 18£0.535£1.07
20 - 48£0.47£0.94
50 - 198£0.425£0.85
200 - 998£0.34£0.68
1000 +£0.335£0.67

*price indicative

Packaging Options:
RS Stock No.:
687-380
Mfr. Part No.:
RQ3P120BKFRATCB
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

100 V

Series

RQ3P120BKFRA

Package Type

HSMT8AG

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
JP
The ROHM N channel power MOSFET designed for efficient energy management in various applications. Capable of withstanding drain-source voltages of up to 100V and continuous current ratings of ±12A, this MOSFET excels in both power density and thermal resistance. The compact HSMT8AG package significantly reduces PCB space requirements by 64%, making it an ideal choice for modern electronic designs that demand reliability and efficiency. With AEC-Q101 qualification, it ensures robust operation in automotive applications, serving a wide range of use cases from ADAS to lighting solutions.

Small high-powered package optimises space on PCBs by 64%
High mounting reliability achieved through innovative terminal and plating treatments
AEC Q101 qualification ensures reliability in automotive applications
Designed to handle a maximum power dissipation of 40W for effective thermal management
Low on-state resistance of 58mΩ enhances efficiency and performance
Robust gate-source voltage tolerance of ±20V expands integration possibilities
Avalanche rating of 8A and energy dissipation of 5.2mJ provides extra protection during operation
Highly reliable operation across a temperature range of -55 to +150°C

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