ROHM HT8MD5HT Dual N-Channel Single MOSFETs, 80 V Enhancement, 8-Pin HSMT-8 HT8MD5HTB1

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Subtotal (1 tape of 2 units)*

£2.92

(exc. VAT)

£3.50

(inc. VAT)

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  • 200 unit(s) ready to ship
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2 - 18£1.46£2.92
20 - 48£1.29£2.58
50 - 198£1.16£2.32
200 - 998£0.935£1.87
1000 +£0.905£1.81

*price indicative

Packaging Options:
RS Stock No.:
687-385
Mfr. Part No.:
HT8MD5HTB1
Brand:
ROHM
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Brand

ROHM

Product Type

Single MOSFETs

Channel Type

Dual N

Maximum Drain Source Voltage Vds

80V

Series

HT8MD5HT

Package Type

HSMT-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

165mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3.1nC

Maximum Power Dissipation Pd

13.0W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.8mm

Width

3.4 mm

Length

3.45mm

Standards/Approvals

RoHS

Automotive Standard

No

The ROHM Power MOSFET designed for versatile electronic applications. With its dual N channel and P channel configuration, this component delivers exceptional performance, allowing for effective power management in motor drives and other demanding circuits. Features such as low on-resistance ensure minimal power loss during operation, while the HSMT8 packaging allows for a compact footprint without compromising performance. HT8MD5H supports a wide voltage range and is compliant with RoHS and halogen-free standards, making it an ideal choice for environmentally-conscious designs. Built with reliability in mind, this MOSFET is suitable for various applications requiring robust performance under varying conditions.

Low on resistance designs enhance efficiency in power applications

High power capabilities in a compact HSMT8 package streamline integration

RoHS compliant and halogen-free construction supports eco-friendly designs

100% Rg and UIS tested for reliability under demanding operational conditions

Optimised for motor drive applications, ensuring effective power control

Wide voltage range ensures versatility in various electronic environments

Designed to withstand maximum junction temperatures of up to 150°C

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