ROHM HT8MD5HT Dual N-Channel MOSFET, 9 A, 80 V, 8-Pin HSMT8 HT8MD5HTB1

View all MOSFETs
Bulk discount available

Subtotal (1 tape of 2 units)*

£1.03

(exc. VAT)

£1.236

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 17 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tape*
2 - 18£0.515£1.03
20 - 48£0.455£0.91
50 - 198£0.41£0.82
200 - 998£0.33£0.66
1000 +£0.32£0.64

*price indicative

Packaging Options:
RS Stock No.:
687-385
Mfr. Part No.:
HT8MD5HTB1
Brand:
ROHM
Find similar products by selecting one or more attributes.
Select all

Brand

ROHM

Channel Type

Dual N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

80 V

Series

HT8MD5HT

Package Type

HSMT8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
JP
The ROHM Power MOSFET designed for versatile electronic applications. With its dual N channel and P channel configuration, this component delivers exceptional performance, allowing for effective power management in motor drives and other demanding circuits. Features such as low on-resistance ensure minimal power loss during operation, while the HSMT8 packaging allows for a compact footprint without compromising performance. HT8MD5H supports a wide voltage range and is compliant with RoHS and halogen-free standards, making it an ideal choice for environmentally-conscious designs. Built with reliability in mind, this MOSFET is suitable for various applications requiring robust performance under varying conditions.

Low on resistance designs enhance efficiency in power applications
High power capabilities in a compact HSMT8 package streamline integration
RoHS compliant and halogen-free construction supports eco-friendly designs
100% Rg and UIS tested for reliability under demanding operational conditions
Optimised for motor drive applications, ensuring effective power control
Wide voltage range ensures versatility in various electronic environments
Designed to withstand maximum junction temperatures of up to 150°C

Related links