Vishay SI2122DS N-Channel MOSFET, 2.17 A, 100 V, 3-Pin PowerPAK SI2122DS-T1-GE3
- RS Stock No.:
- 653-087
- Mfr. Part No.:
- SI2122DS-T1-GE3
- Brand:
- Vishay
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Subtotal (1 tape of 1 unit)*
£0.26
(exc. VAT)
£0.31
(inc. VAT)
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In Stock
- Plus 6,000 unit(s) shipping from 27 October 2025
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Tape(s) | Per Tape |
|---|---|
| 1 - 24 | £0.26 |
| 25 - 99 | £0.23 |
| 100 - 499 | £0.21 |
| 500 - 999 | £0.18 |
| 1000 + | £0.16 |
*price indicative
- RS Stock No.:
- 653-087
- Mfr. Part No.:
- SI2122DS-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.17 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | SI2122DS | |
| Package Type | PowerPAK | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.17 A | ||
Maximum Drain Source Voltage 100 V | ||
Series SI2122DS | ||
Package Type PowerPAK | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for compact, high-efficiency switching in low-power applications. It supports up to 100 V drain-source voltage. Packaged in a SOT-23 format, it utilizes TrenchFET Gen IV technology for low RDS(on), fast switching, and efficient thermal performance in space-constrained designs.
Pb Free
Halogen free
RoHS compliant
Used in LED backlighting
Halogen free
RoHS compliant
Used in LED backlighting
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