Vishay SIR5712DP N-Channel MOSFET, 18 A, 150 V, 8-Pin PowerPAK SIR5712DP-T1-GE3
- RS Stock No.:
- 653-111
- Mfr. Part No.:
- SIR5712DP-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tape of 1 unit)*
£0.61
(exc. VAT)
£0.73
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 6,000 unit(s) shipping from 10 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
---|---|
1 - 24 | £0.61 |
25 - 99 | £0.59 |
100 - 499 | £0.58 |
500 - 999 | £0.49 |
1000 + | £0.46 |
*price indicative
- RS Stock No.:
- 653-111
- Mfr. Part No.:
- SIR5712DP-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 18 A | |
Maximum Drain Source Voltage | 150 V | |
Package Type | PowerPAK | |
Series | SIR5712DP | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type PowerPAK | ||
Series SIR5712DP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in power-dense systems. It supports up to 150 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen V technology to deliver low RDS(on), reduced gate charge, and excellent thermal performance.
Pb Free
Halogen free
RoHS compliant
Halogen free
RoHS compliant
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