Vishay SI2122DS N-Channel MOSFET, 2.17 A, 100 V, 3-Pin PowerPAK SI2122DS-T1-GE3

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Subtotal (1 reel of 3000 units)*

£462.00

(exc. VAT)

£555.00

(inc. VAT)

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  • 6,000 unit(s) shipping from 10 October 2025
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Units
Per unit
Per Reel*
3000 +£0.154£462.00

*price indicative

RS Stock No.:
653-085
Mfr. Part No.:
SI2122DS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.17 A

Maximum Drain Source Voltage

100 V

Series

SI2122DS

Package Type

PowerPAK

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Si

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for compact, high-efficiency switching in low-power applications. It supports up to 100 V drain-source voltage. Packaged in a SOT-23 format, it utilizes TrenchFET Gen IV technology for low RDS(on), fast switching, and efficient thermal performance in space-constrained designs.

Pb Free
Halogen free
RoHS compliant
Used in LED backlighting

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