Microchip TN5325 Silicon N-Channel MOSFET, 1.2 A, 250 V, 3-Pin TO-92 TN5325N3-G
- RS Stock No.:
- 598-241
- Mfr. Part No.:
- TN5325N3-G
- Brand:
- Microchip
Subtotal (1 bag of 1000 units)*
£390.00
(exc. VAT)
£470.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 28 November 2025
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Units | Per unit | Per Bag* |
---|---|---|
1000 + | £0.39 | £390.00 |
*price indicative
- RS Stock No.:
- 598-241
- Mfr. Part No.:
- TN5325N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | N | |
Maximum Continuous Drain Current | 1.2 A | |
Maximum Drain Source Voltage | 250 V | |
Package Type | TO-92 | |
Series | TN5325 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.2 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type TO-92 | ||
Series TN5325 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
Cermet 3306W Side Adjust
Bourns® 3306F Series 6mm Round Trimpot® Trimming Potentiometer
Cross slot adjustment
Horizontal mounting system
Dust / splash resistant covers
PC board stand-off's and retention feature
Lead-free terminals
Horizontal mounting system
Dust / splash resistant covers
PC board stand-off's and retention feature
Lead-free terminals
The Microchip N channel enhancement-mode vertical transistor is a low-threshold, normally-off device that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown.
Low threshold
High input impedance and high gain
Free from secondary breakdown
High input impedance and high gain
Free from secondary breakdown
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