Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 450 mA, 40 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)
- RS Stock No.:
- 598-241
- Mfr. Part No.:
- TN5325N3-G
- Brand:
- Microchip
Subtotal (1 bag of 1000 units)*
£390.00
(exc. VAT)
£470.00
(inc. VAT)
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- Shipping from 23 February 2026
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Units | Per unit | Per Bag* |
|---|---|---|
| 1000 + | £0.39 | £390.00 |
*price indicative
- RS Stock No.:
- 598-241
- Mfr. Part No.:
- TN5325N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N-Channel Vertical DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 450mA | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-92-3 (TO-226AA) | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 4.2mm | |
| Width | 4.2 mm | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N-Channel Vertical DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 450mA | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-92-3 (TO-226AA) | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Length 4.2mm | ||
Width 4.2 mm | ||
Height 5.3mm | ||
Automotive Standard No | ||
The Microchip N channel enhancement-mode vertical transistor is a low-threshold, normally-off device that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown.
Low threshold
High input impedance and high gain
Free from secondary breakdown
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