Microchip TN2640 Silicon N-Channel MOSFET, 4 A, 400 V, 3-Pin TO-92 TN2640N3-G
- RS Stock No.:
- 598-856
- Mfr. Part No.:
- TN2640N3-G
- Brand:
- Microchip
Subtotal (1 bag of 1000 units)*
£1,053.00
(exc. VAT)
£1,264.00
(inc. VAT)
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- Shipping from 28 November 2025
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Units | Per unit | Per Bag* |
---|---|---|
1000 + | £1.053 | £1,053.00 |
*price indicative
- RS Stock No.:
- 598-856
- Mfr. Part No.:
- TN2640N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | N | |
Maximum Continuous Drain Current | 4 A | |
Maximum Drain Source Voltage | 400 V | |
Package Type | TO-92 | |
Series | TN2640 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 1 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 400 V | ||
Package Type TO-92 | ||
Series TN2640 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Microchip N channel enhancement-mode vertical transistor is a low-threshold, normally-off device that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Low on resistance
Free from secondary breakdown
Low input and output leakage
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