Microchip TN2504 Silicon N-Channel MOSFET, 4.5 A, 40 V, 3-Pin SOT-89 TN2504N8-G
- RS Stock No.:
- 598-144
- Mfr. Part No.:
- TN2504N8-G
- Brand:
- Microchip
Subtotal (1 reel of 2000 units)*
£1,530.00
(exc. VAT)
£1,836.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 26 December 2025
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Units | Per unit | Per Reel* |
---|---|---|
2000 + | £0.765 | £1,530.00 |
*price indicative
- RS Stock No.:
- 598-144
- Mfr. Part No.:
- TN2504N8-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | N | |
Maximum Continuous Drain Current | 4.5 A | |
Maximum Drain Source Voltage | 40 V | |
Series | TN2504 | |
Package Type | SOT-89 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.5 A | ||
Maximum Drain Source Voltage 40 V | ||
Series TN2504 | ||
Package Type SOT-89 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Microchip N channel enhancement-mode vertical transistor is a low-threshold, normally-off device that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Low on resistance
Free from secondary breakdown
Low input and output leakage
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