Microchip TN0104 Silicon N-Channel MOSFET, 2.6 A, 40 V, 3-Pin TO-92 TN0104N3-G
- RS Stock No.:
- 598-554
- Mfr. Part No.:
- TN0104N3-G
- Brand:
- Microchip
Subtotal (1 bag of 1000 units)*
£649.00
(exc. VAT)
£779.00
(inc. VAT)
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- Shipping from 22 December 2025
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Units | Per unit | Per Bag* |
|---|---|---|
| 1000 + | £0.649 | £649.00 |
*price indicative
- RS Stock No.:
- 598-554
- Mfr. Part No.:
- TN0104N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.6 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | TN0104 | |
| Package Type | TO-92 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.6 A | ||
Maximum Drain Source Voltage 40 V | ||
Series TN0104 | ||
Package Type TO-92 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Microchip N Channel Enhancement-Mode Vertical low-threshold transistor is built using a vertical DMOS structure and a well-established silicon-gate manufacturing process. This design combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. Like all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Low on resistance
Free from secondary breakdown
Low input and output leakage
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